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inchange semiconductor product specification silicon npn power transistors BD131 description complement to type bd132 with to-126 package high current (max: 3a) low voltage (max: 45v) applications for general purpose power applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v v ceo collector-emitter voltage open base 45 v v ebo emitter -base voltage open collector 6 v i c collector current (dc) 3 a i cm collector current-peak 6 a i bm base current-peak 0.5 a p t total power dissipation t mb 60 15 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 6 k/w
inchange semiconductor product specification 2 silicon npn power transistors BD131 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat-1 collector-emitter saturation voltage i c =0.5a; i b =50ma 0.3 v v cesat-2 collector-emitter saturation voltage i c =2a; i b =0.2a 0.7 v v besat-1 base-emitter saturation voltage i c =0.5a; i b =50ma 1.2 v v besat-2 base-emitter saturation voltage i c =2a; i b =0.2a 1.5 v v cb =50v; i e =0 50 na i cbo collector cut-off current v cb =50v; i e =0 t j =150 10 a i ebo emitter cut-off current v eb =5v; i c =0 50 na h fe-1 dc current gain i c =0.5a ; v ce =12v 40 h fe-2 dc current gain i c =2a ; v ce =1v 20 f t transition frequency i c =0.25a; v ce =5v ;f=100mhz 60 mhz
inchange semiconductor product specification 3 silicon npn power transistors BD131 package outline fig.2 outline dimensions

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